| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a magnetic resistance element capable of improving an MR change rate, to provide a magnetic memory, to provide a magnetic head, and to provide a magnetic recording and reproducing device. <P>SOLUTION: The magnetoresistance effect element includes: a first magnetic layer with its magnetization direction fixed substantially in one direction; a second magnetic layer with its magnetization direction changing in response to an external magnetic field; and a spacer layer provided between the first magnetic layer and the second magnetic layer. At least any of the first magnetic layer and the second magnetic layer contains a magnetic compound represented by a formula M1<SB>a</SB>M2<SB>b</SB>X<SB>c</SB>(5≤a≤68, 10≤b≤73, 22≤c≤85), and M1 is an element of at least one kind selected from Co, Fe, Ni, M2 is an element of at least one kind selected from Ti, V, Cr, Mn, and X is an element of at least one kind selected from N, O, C. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
