发明名称 THIN-FILM TRANSISTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME, AND LIQUID CRYSTAL DISPLAY PANEL HAVING THE SAME
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a thin-film transistor substrate, a method of manufacturing the same, and to provide a liquid crystal display panel having the same. <P>SOLUTION: The thin-film transistor substrate includes: a substrate; gate lines disposed on the substrate and extending in one direction; common voltage lines, disposed on the substrate and spaced apart from the gate lines at predetermined intervals; a gate insulating film, disposed on the gate lines and the common voltage lines, the gate insulating film having first contact holes exposing a part of each common voltage line; common electrodes disposed on the gate insulating film and connected to the common voltage lines through the first contact holes; data lines, disposed on the gate insulating film and extending in a direction of crossing the gate lines; thin-film transistors disposed at crossings of the gate lines and the data lines, the thin-film transistors being connected to the gate lines and the data lines and including gate electrodes, source electrodes and drain electrodes; and pixel electrodes connected to the thin film transistors. <P>COPYRIGHT: (C)2008,JPO&INPIT</p>
申请公布号 JP2008083662(A) 申请公布日期 2008.04.10
申请号 JP20070011807 申请日期 2007.01.22
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 KIM BONG-JUNG;RYU SHUNKI
分类号 G02F1/1368;H01L21/336;H01L21/768;H01L29/786 主分类号 G02F1/1368
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