| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a crystalline semiconductor film capable of controlling the direction of a crystalline grain boundary and the width of a crystal grain. <P>SOLUTION: An insulation film is formed on a substrate; an amorphous semiconductor film is formed on the insulation film; a cap film is formed on the amorphous semiconductor film; and the amorphous semiconductor film is irradiated with a laser beam of continuous oscillation or a laser beam having a repetitive frequency of not less than 10 MHz transmitted through the cap film by scanning, and the amorphous semiconductor film is melted before crystallization. In this case, the period of energy in a longitudinal direction in the beam spot of laser beams is not less than 0.5μm and not more than 10μm, or preferably not less than 1μm and not more than 5μm, the energy distribution in a width direction at the beam spot of laser beams is Gaussian distribution, and one region of an amorphous silicon film is scanned with laser beams for not less than 5 micro seconds and not more than 100 micro seconds. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
