| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device provided with memory cells having stabilized threshold voltages for suppressing fluctuation in film thickness of a floating gate electrode. SOLUTION: The method for manufacturing the semiconductor device including a memory region and a peripheral circuit region includes the steps of depositing a hard mask material on a semiconductor substrate 10, patterning the hard mask 30 by removing the hard mask material on an element isolating region, forming a trench 35 to the semiconductor substrate using the hard mask, forming an STI by filling the trench with an element isolating and insulating material 40, removing the hard mask in the memory region and the hard mask in a dummy active region, forming a tunnel gate insulating film 48 on the exposed semiconductor substrate, depositing a gate electrode material 50 on the tunnel gate insulating film, and polishing the gate electrode material up to the upper surface level of the hard mask. COPYRIGHT: (C)2008,JPO&INPIT
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