| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a copper-based bonding wire for semiconductor device which has a reduced material cost, is excellent in a ball bonding shape, wire bonding property etc., and has a good loop formability, and a superior mass productivity. <P>SOLUTION: The copper alloy bonding wire for a semiconductor device contains at least one kind of Mg and P in total of 10 to 700 mass ppm, and having a dense layer containing the total density of Mg and P of ten or more times the containing density on the surface of the wire. <P>COPYRIGHT: (C)2008,JPO&INPIT |
