| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a photoresist underlay film material having an excellent antireflection effect against exposure at a short wavelength, having a high etching selection ratio and capable of giving an almost perpendicular profile of a resist pattern to be formed in an overcoat photoresist film. <P>SOLUTION: The photoresist underlay film material is prepared by adding a condensed product of alkoxysilane expressed by formula (1):Si(OR<SP>1</SP>)<SB>4</SB>with a polymer compound having a repeating unit expressed by formula (2). In formula (1), R<SP>1</SP>represents a hydrogen atom or a 1-10C alkyl group or acyl group and a plurality of R<SP>1</SP>may be identical or different from each other. In formula (2), R<SP>2</SP>represents a hydrogen atom, a methyl group, -CH<SB>2</SB>C(=O)-O-R<SP>3</SP>or -CH<SB>2</SB>-O-R<SP>4</SP>, wherein R<SP>3</SP>represents a hydrogen atom or a 1-4C straight-chain or branched alkyl group and R<SP>4</SP>represents a hydrogen atom or a 1-4C straight-chain or branched alkyl group or a 1-4C straight-chain or branched acyl group; R<SP>5</SP>represents a 1-10C straight-chain, branched or cyclic alkylene group; R<SP>6</SP>represents an organic group having at least one silicon atom; and X represents -O-, -C(=O)-O- or -C(=O)-NR-, wherein R represents a hydrogen atom or a 1-4C straight-chain or branched alkyl group. <P>COPYRIGHT: (C)2008,JPO&INPIT |
