| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a phase shift mask for improving the accuracy of a fine structure in a semiconductor device having a concentric pattern. <P>SOLUTION: The phase shift mask for manufacturing a semiconductor element comprises concentrically disposed light shielding portions 101b, 101a2, 101a1, a light transmitting portion 102, a phase shift portion 103 and an auxiliary pattern portion 104, wherein the width of the auxiliary pattern portion 104 in a radial direction is smaller than both of the width of the light transmitting portion 102 in the radial direction and the width of the phase shift portion 103 in the radial direction. The phase of exposure light passing through the auxiliary pattern portion 104 may be an inverted phase to the phase of exposure light passing through the light transmitting portion 102 or the phase shift portion 103 close to the auxiliary pattern portion 104. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
