FILM-FORMING APPARATUS, FILM-FORMING METHOD, INSULATION FILM, DIELECTRIC FILM, PIEZOELECTRIC FILM, FERROELECTRIC FILM, PIEZOELECTRIC ELEMENT AND LIQUID DISCHARGE DEVICE

摘要

PROBLEM TO BE SOLVED: To stably form a film of high quality in a film-forming apparatus and a film-forming method using plasma.

SOLUTION: In a film-forming apparatus 300 including a vacuum chamber 310 having a gas inlet for a film-forming gas G and a gas outlet, a target holder 12 disposed in the vacuum chamber 310 to hold a target T, a substrate holder 11 opposed to the target holder 12 and holding a film-forming substrate B, and plasma forming portions 12, 13 generating a plasma space P between the target holder 12 and the film-forming substrate, a shield 250 is provided. The shield 250 surrounds the outer peripheral surface of the target holder 12 facing the substrate, and comprises a plurality of shield layers 250a having a gap 204 thorough which the film-forming gas G passes so as to be disposed in a noncontact state with the target T in such a manner that they are lapped with intervals to the upper and lower directions.

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