| 摘要 |
PROBLEM TO BE SOLVED: To provide a two-crystallization X-ray topography device that can extend the longitudinal angle of divergence and extend the lateral field of view in response to increase in the diameter of a semiconductor wafer. SOLUTION: The two-crystallization X-ray diffraction topography device makes diffracted X-ray come at a predetermined angle while scanning a surface of a second crystal 2 as a sample, records the diffracted X-rays obtained from the surface of the second crystal as the sample on an X-ray film 4, and obtains X-ray topography. An X-ray generating section is constituted by an X-ray source 5, a collimator 10, a slit 6 for making the X-rays come with a predetermined width, a topogonio section is constituted by a first crystal 1, the second crystal 2, and the upside of the X-ray film 4, and the topogonio section is mounted on a surface plate 3. The X-ray generating section is mounted on a scanning pedestal 7 movable with respect to the surface plate, and diffracted X-rays obtained from the X-rays from the X-ray source 5 via the first crystal 1 are scanned on the surface of the second crystal 2. COPYRIGHT: (C)2008,JPO&INPIT
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