发明名称 SINGLE CRYSTAL GROWTH APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a single crystal growth apparatus controlling the temperature distribution of a melt. SOLUTION: The single crystal growth apparatus comprises an electrically conductive crucible 16 to be filled with a raw material, an induction heating coil 20 that surrounds the side surface of the crucible 16 and heats the raw material in the crucible 16 to form a melt, a holder 28 that pulls up a single crystal from the melt, a support mount 24 that supports the crucible 16, an induction heating coil 30 that heats the holder 28, and an induction heating coil 32 that heats the support mount 24. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008081337(A) 申请公布日期 2008.04.10
申请号 JP20060261090 申请日期 2006.09.26
申请人 TOYOTA MOTOR CORP 发明人 SHIRASAWA ATSUSHI
分类号 C30B15/14;C30B15/32 主分类号 C30B15/14
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