INTRINSICALLY STRESSED LINER AND FABRICATION METHODS THEREOF

摘要

A stressed liner for improving carrier mobility in a transistor and a method for fabricating the same is disclosed. The stressed liner includes an intrinsically stressed conductive film encapsulated between two insulating layers such as silicon nitride, silicon oxide, or oxynitride. The stressed liner may be compressively-stressed or tensile-stressed depending on whether an n-FET or p-FET is required.