发明名称 |
PATTERN FORMING METHOD AND COATING FILM FORMING MATERIAL |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a new pattern forming method capable of reducing the number of steps in a double patterning process, and a coating film forming material suitable for use in the pattern forming method. <P>SOLUTION: A first chemically amplified resist composition is applied on a support 1 to form a first resist film 2. The first resist film 2 is selectively exposed and developed to form a plurality of first resist patterns 3. Coating films 4 comprising a water-soluble resin film are formed on the respective surfaces of the first resist patterns 3 to form a plurality of coated patterns 5. A second chemically amplified resist composition is applied on the support 1 on which the coated patterns 5 have been formed to form a second resist film 6. The second resist film 6 is selectively exposed and developed to form a pattern comprising the plurality of coated patterns 5 and second resist patterns 7 formed of the second resist film 6 on the support 1. <P>COPYRIGHT: (C)2008,JPO&INPIT |
申请公布号 |
JP2008083537(A) |
申请公布日期 |
2008.04.10 |
申请号 |
JP20060265115 |
申请日期 |
2006.09.28 |
申请人 |
TOKYO OHKA KOGYO CO LTD |
发明人 |
ISHIKAWA KIYOSHI;KOSHIYAMA ATSUSHI;WAKIYA KAZUMASA |
分类号 |
G03F7/40;G03F7/038;G03F7/039;G03F7/20;G03F7/26;H01L21/027 |
主分类号 |
G03F7/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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