| 摘要 |
PROBLEM TO BE SOLVED: To provide the metal (for instance, copper) wiring of a semiconductor element capable of improving the charging characteristics of a metal film, and its manufacturing method. SOLUTION: One or more insulating layers (32) are formed on a substrate (30), and the metal wiring is formed by electrically plating a diffusion blocking layer and a seed layer (34) on a recess formed on the substrate before electrically plating a metal layer for filling the recess formed on the insulating layer (32). Thereafter, the seed layer is formed on the blocking layer and then electrolytically polished (36), and after the electrolytic polishing of the seed layer, a copper substance layer is formed on the polished seed layer by using an electric plating process (38) to fill the recess. COPYRIGHT: (C)2008,JPO&INPIT |
