发明名称 METHOD FOR GROWING CARBON NANOTUBE, STRUCTURE OF CARBON NANOTUBE AND FIELD EFFECT TRANSISTOR
摘要 PROBLEM TO BE SOLVED: To crosslink a large number of carbon nanotubes effectively between catalytic function metallic regions at the top of a set of protrusion patterns in order to attain high speed operation by increasing the amount of current per unit gate width of a field effect transistor employing a carbon nanotube as a channel portion. SOLUTION: A first insulating layer, a second insulating layer having an overhung structure and a catalytic function metal layer are formed sequentially on a substrate, two rows of protrusion pattern are formed at a predetermined interval, and crosslinking growth of carbon nanotube is performed between the pattern regions of the catalytic function metal layer of the two rows of protrusion pattern. Since an overhung portion exists, a carbon nanotube which began to grow from the pattern region of one catalytic function metal layer can be prevented drastically from touching the underlying insulating layer or substrate and crosslinking can be carried out effectively. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008084892(A) 申请公布日期 2008.04.10
申请号 JP20060259778 申请日期 2006.09.25
申请人 FUJITSU LTD 发明人 HIROSE SHINICHI;IWAI DAISUKE
分类号 H01L29/786;B82B1/00;B82B3/00;H01L21/336;H01L29/06 主分类号 H01L29/786
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