| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can improve the withstanding voltage in forming an floating electrode in a terminal area. SOLUTION: A terminal area 42 of a semiconductor device 1 having an active region 41 in which a MOSFET is prepared and the terminal area 42 located in exterior of the active region 41 includes an end electrode 52 connected to a drain electrode 50 and formed in the end on an epitaxial layer 44, a plurality of trenches 53 formed in the surface of the epitaxial layer 44, a floating electrode 54 formed respectively in the plurality of trenches 53, and a plurality of Zener diodes 4 not only connected in series mutually between a source electrode 49 of the active region 41 and the end electrode 52 but also connected to the each floating electrode 54, each of which is composed of n-type conductor 2 and p-type conductor 3. COPYRIGHT: (C)2008,JPO&INPIT
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