| 摘要 |
In one aspect, a bump electrode of a semiconductor device is formed by providing a substrate including a pad electrode, forming a seed layer over the pad electrode, and forming a mask layer over the seed layer which includes an opening aligned over the pad electrode. A barrier plating layer is electroplated within the opening over the seed layer, and a bump plating layer is electroplated over the barrier plating layer. The mask layer is removed, and the seed layer is etched using the bump plating layer as a mask.
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