METHOD FOR MANUFACTURING GROUP III NITRIDE COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE, GROUP III NITRIDE COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE, AND LAMP

摘要

Disclosed is a method for manufacturing a group III nitride compound semiconductor light-emitting device having excellent emission characteristics with excellent productivity. Also disclosed are a group III nitride compound semiconductor light-emitting device and a lamp. Specifically disclosed is a method for manufacturing a group III nitride compound semiconductor light-emitting device, wherein an intermediate layer (12) composed of at least a group III nitride compound is arranged on a substrate (11), and then an n-type semiconductor layer (14) comprising a foundation layer (14a), a light-emitting layer (15) and a p-type semiconductor layer (16) are sequentially arranged on the intermediate layer (12). This method comprises a pretreatment step for plasma processing the substrate (11) and a sputtering step following the pretreatment step for forming the intermediate layer (12) on the substrate (11) by a sputtering method.