| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce the temperature in crystallizing treatment for a zinc oxide film, and to reduce treatment time. <P>SOLUTION: A zinc oxide film (f) is deposited on a base material W by a spin coat process, plasma CVD (Chemical Vapor Deposition) or the like. While the base material W is heated to about 350°C by a temperature control means 40, so as to perform temperature control, a treatment gas for crystallization, e.g., composed of a gaseous mixture of oxygen and nitrogen is converted into plasma by a plasma irradiation means 10, and the base material W is irradiated with the plasma. <P>COPYRIGHT: (C)2008,JPO&INPIT |
