| 摘要 |
PROBLEM TO BE SOLVED: To stack TMR (Tunneling Magneto Resistive) elements in multiple steps without increasing transistor density in the periphery of an array. SOLUTION: A magnetic random access memory related to the present invention comprises a plurality of TMR arrays stacked in multiple steps, write lines arranged in the TMR arrays and extending from one end to other end of a first direction of the TMR arrays, contact plugs that commonly connects write lines in the TMR arrays at one end of the first direction, contact plugs that commonly connect the write lines in the TMR arrays at the other end of the first direction, wiring lines arranged in the TMR arrays and extending from one end to the other end in a second direction orthogonal to the first direction of the TMR arrays, and first selection transistors connected to one end of the wiring lines, wherein no selection transistor is individually connected to each TMR element in the plurality of TMR arrays. COPYRIGHT: (C)2008,JPO&INPIT
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