SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device which allows the penetration of siliciding reaction into an emitter layer to be suppressed. SOLUTION: This semiconductor device (bipolar transistor 100) is provided with a diffusion layer 7, a cobalt silicide film 9a which is formed on a surface of the diffusion layer 7 and is made from a metal-semiconductor compound of metal and semiconductor, and a reaction restriction layer 8 which is formed between the diffusion layer 7 and the cobalt silicide film 9a, and restricts the penetration of the metal diffused from the cobalt silicide film 9a. COPYRIGHT: (C)2008,JPO&INPIT