| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device capable of suppressing the increase of wiring resistance and the increase of contact resistance, etc., between wafers and in the same wafer. SOLUTION: The method of manufacturing the semiconductor device includes a process of arranging a substrate to be treated having a stacked film containing a first insulating film and a second insulating film formed on a semiconductor substrate in etching equipment and etching the first insulating film and the second insulating film in the same etching equipment. The first insulating film comprises a nitrogen-containing film, the second insulating film comprises an SiOCH film or the like, and gas including fluorocarbon represented by CxFy is used as both of the etching gas of the first insulating film and the etching gas of the second insulating film in the process. COPYRIGHT: (C)2008,JPO&INPIT
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