发明名称 Rectifier circuit, semiconductor device using the rectifier circuit, and driving method thereof
摘要 An object of the present invention is to provide a rectifier circuit which can suppress loss of power due to parasitic capacitance or parasitic inductance of a semiconductor element. The rectifier circuit matches or mismatches impedance between a circuit of a previous stage and the rectifier circuit in accordance with the amplitude of an input AC voltage. When an AC voltage to be input has a smaller amplitude than a predetermined voltage, impedance is matched and the AC voltage is applied as is to the rectifier circuit. Conversely, when an AC voltage to be input has a larger amplitude than a predetermined voltage, impedance is mismatched, and the amplitude of the AC voltage is decreased by reflection and then the AC voltage is applied to the rectifier circuit.
申请公布号 US2008083969(A1) 申请公布日期 2008.04.10
申请号 US20070905699 申请日期 2007.10.03
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 OSADA TAKESHI
分类号 H01L29/93;H02M7/00 主分类号 H01L29/93
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