Verfahren zur Herstellung einer Nitrid-basierten Verbindungsschicht, eines GaN-Substrats und einer Nitrid-basierten Halbleiter-Leuchtvorrichtung mit vertikaler Struktur

摘要

The method involves forming a mask layer (22) with predetermined pattern on a prepared gallium nitride substrate (21) to expose a partial area of the gallium nitride substrate. A buffer layer (23) is formed on the partially exposed gallium nitride substrate. Nitride-based compound is laterally grown from the top surface of the buffer towards the top surface of the mask layer to vertically grow the nitride-based compound layer to predetermined thickness. The mask layer and buffer layer are removed via wet etching to separate the nitride-based compound layer from the gallium nitride substrate. The buffer layer is made of a material having 10 percent or less lattice mismatch with gallium nitride. The buffer layer contains zinc oxide and gallium trioxide. The mask layer includes a silicon oxide film and a silicon nitride film. The wet etching solution used in the wet etching process contains hydrogen chloride and hydrogen fluoride. Independent claims are included for the following: (1) fabrication of the gallium nitride substrate; and (2) fabrication of the vertical nitride semiconductor light emitting device.