| 发明名称 |
Herstellungsverfahren einer HF-Induktivität |
| 摘要 |
<p>A method for forming an RF inductor of helical shape having high Q and minimum area. The inductor is fabricated of metal or damascened linear segments formed on three levels of intermetal dielectric layers and interconnected by metal filled vias to form the complete helical shape with electrical continuity.</p> |
| 申请公布号 |
DE60221321(T2) |
申请公布日期 |
2008.04.10 |
| 申请号 |
DE2002621321T |
申请日期 |
2002.05.29 |
| 申请人 |
CHARTERED SEMICONDUCTOR MFG. PTE. LTD. |
发明人 |
CHA, RANDALL;LEE, TAE JONG;SEE, ALEX;CHAN, LAP;TEE, CHUA CHEE |
| 分类号 |
H01L21/02;H01F17/00;H01F41/04;H01L23/522;H01L23/64;H01L27/08 |
主分类号 |
H01L21/02 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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