| 摘要 |
FIELD: microelectronics. ^ SUBSTANCE: proposed method used for producing polycrystalline silicon gates of field-effect transistors and interconnections of large-scale integrated circuit components, and also emitters of bipolar transistors, resistors, and photodetector materials includes silicon layer application by magnetron spraying of silicon target in vacuum. Material has more perfect amorphous structure free from polycrystalline inclusions. Amorphous silicon layer is transformed into polycrystalline layer upon high-temperature doping with phosphate or boron conducted at T = 850-900 °C. Configurations of structural components, such as gates and interconnections, are selected by way of photolithography. ^ EFFECT: enhanced reliability, safety, and integration level of very large-scale metal-oxide-semiconductor integrated circuits. ^ 1 cl |
