| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a contact plug which suppresses contact between contact layers adjacent to each other and reduces contact resistance. <P>SOLUTION: A method for manufacturing a semiconductor having the contact plug includes a step of epitaxially growing a single-crystal silicon layer on the surface of a silicon substrate 11 exposed from a wiring structure 14 to form a first contact layer 21, a step of forming an inter-layer insulating film 23 having a contact hole 24 exposing the surface of the first contact layer 21, and a step of epitaxially growing a single-crystal silicon layer on the surface of the first contact layer 21 exposed from the contact hole 24 to form a second contact layer 25. <P>COPYRIGHT: (C)2008,JPO&INPIT |
