| 摘要 |
PROBLEM TO BE SOLVED: To raise the reliability in a high-output operation by lessening the end surface deterioration in the high-output operation by lessening the vertical beam expansion and by raising the heat transfer to a heat dissipating body side. SOLUTION: A semiconductor laser device comprises a heat sink 24 having a principal surface, an n-AlGaAs clad layer 30 disposed on the principal surface of the heat sink 24, an AlGaAs active layer 34 disposed on the n-AlGaAs clad layer 30, and a p-AlGaAs clad layer 38 disposed on the AlGaAs active layer 34, wherein the effective refractive index and the heat resistance between a principal surface of the heat sink 24 side of the AlGaAs active layer 34 and a principal surface of the heat sink 24 side of the n-AlGaAs clad layer 30 are made to be smaller, respectively, than the effective refractive index and the heat resistance between a principal surface of the opposite side to the heat sink 24 of the AlGaAs active layer 34 and a principal surface of the opposite side of the heat sink 24 of the p-AlGaAs clad layer 38. COPYRIGHT: (C)2008,JPO&INPIT
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