| 摘要 |
PROBLEM TO BE SOLVED: To realize an effective ion implantation method to constitute a low resistance and shallow pn junction. SOLUTION: The ion implantation method comprises a step of first ion implantation by implanting ion of a first group III element, for forming a first region 82 with the first group III element distributed on the surface of a semiconductor substrate 81; and a step of second ion implantation by implanting ion of a second group III element, for forming a second region 83 including the first region 82 and being larger than the first region 82 on the surface of the semiconductor substrate 81 with the first group III element distributed thereon, and distributed with the second group III element and its compound having lighter mass than that of the first group III element. COPYRIGHT: (C)2008,JPO&INPIT
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