METHOD AND DEVICE FOR REMOVING IMPURITY ON GROUND SURFACE OF SEMICONDUCTOR WAFER, METHOD FOR MANUFACTURING SEMICONDUCTOR WAFER AND SEMICONDUCTOR CHIP, AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method for removing an impurity on the ground surface of the thinned semiconductor wafer capable of providing a highly reliable semiconductor device even though the thickness of the semiconductor chip is thinned. SOLUTION: The impurity on the ground surface is removed by sandblasting after the rear surface of the semiconductor wafer 1 is ground. The sand particle used at sandblasting is the sand particle without a copper or a nickel included, and a concentration of the included copper or nickel is preferably not more than 1014(atoms cm-3). After this sandblasting, the foreign material, extra sand particles or the like on the ground surface are removed by spraying with a compressed air to the ground surface of the thinned semiconductor wafer 1. After that, the semiconductor chip is obtained by dicing the thinned semiconductor wafer 1. COPYRIGHT: (C)2008,JPO&INPIT