| 摘要 |
PROBLEM TO BE SOLVED: To precisely measure the thickness, degree of planarity, and trench depth provided to a wafer. SOLUTION: The method and device which measure the thickness, the degree of the planarity and the trench depth etched into the wafer. The trench is measured actually as a projection part actually by seeing the trench from a back side of the wafer at the measurement. Measurement is performed in a front side and the back side by a non-contact type optical instrument. This non-contact type optical instrument carries out simultaneous measurement of the wavelengths of the front side and of the back side. The distance between the wavelengths is converted into a measured value of the thickness. A near infrared beam as a light source is used for the measurement of the thickness and the trench depth of silicon wafer. The thickness, the degree of the planarity and the local shape can be measured by a calibration method, using a pair of optical styli. COPYRIGHT: (C)2008,JPO&INPIT
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