发明名称 |
Methods for uniform doping of non-planar transistor structures |
摘要 |
Methods for uniformly tip doping a silicon body of a non-planar transistor and devices and systems formed by such methods. In one embodiment, a method can include vertical tip ion implantation of a silicon body with at least three surfaces on a substrate followed by conformal deposition of a dielectric material. The dielectric material can be selectively etched to expose a top surface of the silicon body followed by selective re-oxidation of the top surface for form a mask. The remaining dielectric material can be removed followed by angled ion implantation of at least two sidewalls of the silicon body. The mask can be removed resulting in a silicon body with uniform doping.
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申请公布号 |
US2008085580(A1) |
申请公布日期 |
2008.04.10 |
申请号 |
US20060529963 |
申请日期 |
2006.09.29 |
申请人 |
DOYLE BRIAN;CHAU ROBERT;DATTA SUMAN;KAVALIEROS JACK |
发明人 |
DOYLE BRIAN;CHAU ROBERT;DATTA SUMAN;KAVALIEROS JACK |
分类号 |
H01L21/8238;H01L29/94 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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