| 摘要 |
<p>A nonvolatile memory device and a manufacturing method of the same are provided to stabilize threshold operation voltage by forming a resistance layer for determining the phase of a resistive memory device at an edge portion of a lower electrode as a laminated structure. A nonvolatile memory device comprises a lower electrode(115) and an upper electrode. A resistive layer is formed along the edge portion of the lower electrode. An insulating layer(113) is embedded inside the resistive layer. The upper electrode is formed on the resistive layer and the insulating layer. The resistive layer comprises three resistive layers, wherein a first resistive layer(125a) is formed on the lower electrode, a second resistive layer(125b) is formed on the first resistive layer, and a third resistive layer(125c) is formed on the second resistive layer.</p> |
