| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device in which a time required for automatic erasure can be shortened without improving a cell characteristic. <P>SOLUTION: A memory cell array 11 has a plurality of blocks, each block has a plurality of memory cells. A redundancy memory cell array 31 has a plurality of blocks, each block has a plurality of memory cells. A write circuit writes data in the memory cell array. An erasure circuit erases data of the memory cell array in a block unit. A storage circuit 71 stores an address of a block when a failure occurs when the erasure circuit erases data from the prescribed block of the memory cell array by the erasure circuit. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
