| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for making a photomask necessary for manufacturing a semiconductor device, avoiding a risk of a short circuit or the like in a dummy region among elements, circuits or wells. <P>SOLUTION: The method for making a photomask includes, as one embodiment of the present invention: a first step of preparing a first pattern where a plurality of dummy regions are regularly disposed; a second step of preparing a second pattern where a pattern of an element and a circuit or a well pattern is scribed; a third step of superposing the first and second patterns and erasing the dummy region in a portion overlapping the element and the circuit or in a portion of the boundary of the well and determine the layout of the dummy regions; and a fourth step of making a photomask to which the dummy regions with determined layout and the pattern of elements and circuits or the well pattern are transferred. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
