| 摘要 |
PROBLEM TO BE SOLVED: To provide a composition for forming an etching stopper film which can form an etching stopper insulation film having a high etching selectivity with respect to both inorganic and organic system interlayer insulation films which apply to an interconnection layer and a Via layer and also having a low dielectric constant, and to provide a film and an electronic device which use the composition. SOLUTION: The composition for forming an etching stopper film contains a hydrosilylated polymer (A) obtained by reaction between hydridesilsesquioxanes expressed by a specific general expression and a polyin compound expressed by a specific general expression. The film formed of this composition and the electronic device having the film are also provided. COPYRIGHT: (C)2008,JPO&INPIT
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