发明名称 SEMICONDUCTOR STORAGE DEVICE
摘要 PROBLEM TO BE SOLVED: To easily reserve the operation margin during write operation in a DRAM and the like for which a high-frequency operation is required. SOLUTION: For example, a WENB generation circuit 18-1 provided within a read-write control circuit generates a pulse PULSE having an activation period regulated by an RC delay section 18a comprising a resistance element R and a capacitor element C synchronized with an internal clock CLKIN. The generated pulse PULSE is then inverted by an inverter circuit INVd of an output section and is outputted as a write activation signal WENB to inactivate the pulse PULSE in a write operation period (activation period) of SA. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008084496(A) 申请公布日期 2008.04.10
申请号 JP20060266049 申请日期 2006.09.28
申请人 TOSHIBA CORP 发明人 IIZUKA MARIKO
分类号 G11C11/4076;G11C11/407 主分类号 G11C11/4076
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