Bipolar Transistor And Method Of Manufacturing The Same

摘要

The invention relates to a semiconductor device ( 10 ) with a semiconductor body ( 12 ) comprising a bipolar transistor with an emitter region ( 1 ), a base region ( 2 ) and a collector region ( 3 ) of, respectively, a first conductivity type, a second conductivity type, opposite to the first conductivity type, and the first conductivity type, wherein, viewed in projection, the emitter region ( 1 ) is positioned above or below the base region ( 2 ), and the collector region ( 3 ) laterally borders the base region ( 2 ). According to the invention, the base region ( 2 ) comprises a highly doped subregion ( 2 A) the doping concentration of which has a delta-shaped profile in the thickness direction, and said highly doped sub-region ( 2 A) extends laterally as far as the collector region ( 3 ). Such a lateral bipolar transistor has excellent high-frequency properties and a relatively high breakdown voltage between the base and collector regions ( 2, 3 ), implying that the device is suitable for high power applications. The doping concentration lies preferably between about 10¹⁹ and about 10²⁰ at/cm³, and the thickness of the sub-region ( 2 A) lies between 1 and 15 nm and preferably between 1 and 10 nm. The invention also comprises a method of manufacturing such a device ( 10 ).