发明名称 METHODS OF FORMIMG A SINGLE LAYER SUBSTRATE FOR HIGH CAPACITY MEMORY CARDS
摘要 Methods of forming a semiconductor package including a single-sided substrate are disclosed. In a first embodiment of the present invention, a substrate may include a conductive layer on a top surface of the substrate, i.e., on the same side of the substrate as where the die are mounted. In a second embodiment of the present invention, a substrate may include a conductive layer on a bottom of the substrate, i.e., on the opposite side of the substrate as where the die are mounted.
申请公布号 WO2008042657(A2) 申请公布日期 2008.04.10
申请号 WO2007US79450 申请日期 2007.09.25
申请人 SANDISK CORPORATION;YU, CHEEMAN;TAKIAR, HEM;LIAO, CHIH-CHIN 发明人 YU, CHEEMAN;TAKIAR, HEM;LIAO, CHIH-CHIN
分类号 H01L23/498 主分类号 H01L23/498
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