发明名称 |
METHODS OF FORMIMG A SINGLE LAYER SUBSTRATE FOR HIGH CAPACITY MEMORY CARDS |
摘要 |
Methods of forming a semiconductor package including a single-sided substrate are disclosed. In a first embodiment of the present invention, a substrate may include a conductive layer on a top surface of the substrate, i.e., on the same side of the substrate as where the die are mounted. In a second embodiment of the present invention, a substrate may include a conductive layer on a bottom of the substrate, i.e., on the opposite side of the substrate as where the die are mounted. |
申请公布号 |
WO2008042657(A2) |
申请公布日期 |
2008.04.10 |
申请号 |
WO2007US79450 |
申请日期 |
2007.09.25 |
申请人 |
SANDISK CORPORATION;YU, CHEEMAN;TAKIAR, HEM;LIAO, CHIH-CHIN |
发明人 |
YU, CHEEMAN;TAKIAR, HEM;LIAO, CHIH-CHIN |
分类号 |
H01L23/498 |
主分类号 |
H01L23/498 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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