| 摘要 |
PROBLEM TO BE SOLVED: To make a deflection of a semiconductor small in the method of fabricating a semiconductor light element, which contains a semiconductor laser and an EA modulator, on substrate. SOLUTION: In advance of growth of an active layer 27 for an EA modulator, at least part of deposition, namely an abnormal growth portion 25 formed at the growth of the first optical confinement layer 23, on an etching edge face 19a of a first semiconductor portion 19 is removed by etching. In this way, bend of the active layer 27 for the EA modulator caused by the abnormal growth portion 25 can be made small. COPYRIGHT: (C)2008,JPO&INPIT
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