| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride semiconductor element that has low contact resistance not only with a nitride semiconductor layer but with a pad electrode, and is tremendously excellent in adhesiveness and mechanical strength. SOLUTION: The nitride semiconductor element has a laminated semiconductor layer with a primary conductive semiconductor layer, an active layer, and a secondary conductive semiconductor layer laminated in order and an electrode formed on the top surface of the secondary conductive semiconductor layer, wherein the electrode has a first metal layer, a second metal layer, and a third metal layer laminated in order at least from the laminated semiconductor layer side, the first and third metal layers are metal layers containing the same material, the first metal layer has a density higher than the third metal layer's, and the second metal layer contains a material different from that of the first and the third metal layers. COPYRIGHT: (C)2008,JPO&INPIT
|
