| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of discriminating a crystal defect region of monocrystalline silicon by utilizing metal contamination and heat treatment, which can analyze the crystal defect region accurately and easily in a short time period without depending on the concentration of oxygen in monocrystalline silicon. SOLUTION: In this method of discriminating a crystal defect region of monocrystalline silicon, after a sample in the shape of a silicon wafer or a slice of monocrystalline silicon ingot is prepared, at least one side of the sample is contaminated with metal at a contamination concentration of about 1×10<SP>14</SP>to 5×10<SP>16</SP>atoms/cm<SP>2</SP>. The contaminated sample is heat-treated, and of which the contaminated side or the opposite side of the heat-treated sample is observed to discriminate a crystal defect region. COPYRIGHT: (C)2008,JPO&INPIT |
