| 摘要 |
PROBLEM TO BE SOLVED: To provide a programming method of a ferroelectric memory device which can regulate a level of a reference voltage. SOLUTION: The programming method of a ferroelectric memory device includes; a first stage in which a reference voltage is provided at a prescribed first level; a second stage in which cells or the like which include data at the reference voltage or below, among cells or the like which are provided so that the first-level data may be included with respect to the reference voltage provided at the prescribed first level, are processed to weak cells to execute a redundancy program; a third step in which a reference voltage is provided at a second level which is lower than the first level; a fourth stage in which cells or the like which include data at the reference voltage or higher, among cells or the like which are provided so that the second-level data may be included with respect to the reference voltage provided at the prescribed second level, are processed to weak cells to execute a redundancy program; and a fifth stage in which a reference voltage is provided at the center value of the prescribed first level and the prescribed second level. COPYRIGHT: (C)2008,JPO&INPIT
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