Disclosed is a light-emitting device comprising a group III nitride semiconductor layer which is composed of a group III nitride semiconductor having a nonpolar or semipolar major surface and has a multilayer structure including at least an n-type layer and a p-type layer. A surface of the group III nitride semiconductor layer on the light extraction side is a mirror surface. This light-emitting device may further comprises a transparent electrode which is in contact with the surface of the group III nitride semiconductor layer on the light extraction side. In this case, a surface of the transparent electrode on the light extraction side is preferably a mirror surface.
