| 摘要 |
A method for forming an interconnect on a semiconductor suabstrate comprises providing at least one carbon nanotube (304) within a trench, etching at least one portion of the carbon nanotube to create an opening (602) conformally depositing a metal layer on the carbon nanotube through the opening, and forming a metallized contact (308) at the opening that is substantially coupled to the carbon nanotube. The metal layer may be conformally deposited on the carbon nanotube using an atomic layer depositionm process or an electroless plating process. Multiple metal layers may be deposited to substantially fill voids within the carbon nanotube. The electroless plating process may use as supercritical liquid as the medium for the plating solution. The wetting behavior of the carbon nanotube may be modified prior to the electroless plating process to increase the hydrophilicity of the carbon nanotube. |
