| 摘要 |
A power MOSFET includes an n - -drain layer (12), a drain contact layer (11) disposed on a first side of the drain layer, a p-type base layer (13) disposed on a second side of the drain layer, and an n-source layer (14) disposed on the base layer. A gate electrode (16) faces, through a gate insulating film (15), a channel region, which is part of the base layer between the drain and source layers. Source and drain electrodes (17, 18) are electrically connected to the source and drain contact layers, respectively. A plurality of hetero regions (12a, 12b) having a dielectric constant higher than that of the drain layer is disposed in the drain layer between the source and drain electrodes. |
