| 摘要 |
A power semiconductor device formed of a substrate of a first conductivity type, an epitaxial layer of a first conductivity type formed on a surface of the substrate, a plurality of lightly doped spaced base regions of a second conductivity type formed to a first predetermined depth in the epitaxial layer with common conduction regions between the base regions, a plurality of highly doped source regions of the first conductivity type formed in the lightly doped base regions, invertible channel regions disposed between the source regions and the common conduction regions, deep implanted junctions of the second conductivity type formed in the epitaxial layer under the base regions extending between the first predetermined depth and a second predetermined depth, gate electrodes insulated from the invertible channels by an insulation layer formed over the invertible channels, and thick insulation spacers disposed over at least a portion of the common conduction regions. |
