发明名称 |
Improved scattering bar OPC application method for sub-half wavelength lithography patterning |
摘要 |
A method of forming a mask having optical proximity correction features, which includes the steps of obtaining a target pattern of features to be imaged, expanding the width of the features to be imaged, modifying the mask to include assist features which are placed adjacent the edges of the features to be imaged, where the assist features have a length corresponding to the expanded width of the features to be imaged, and returning the features to be imaged from the expanded width to a width corresponding to the target pattern. |
申请公布号 |
EP1494071(A3) |
申请公布日期 |
2008.04.09 |
申请号 |
EP20040253957 |
申请日期 |
2004.06.30 |
申请人 |
ASML MASKTOOLS B.V. |
发明人 |
LAIDIG, THOMAS;WAMPLER, KURT E.;VAN DEN BROEKE, DOUGLAS;CHEN, JANG FUNG |
分类号 |
G03F1/00;G03F1/36;G03F7/20;G03F9/00;G06F17/00;G06F17/50;H01L21/00;H01L21/027 |
主分类号 |
G03F1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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