Light-emitting gallium nitride-based compound semiconductor device,申请号EP19930118670-传众专利搜索

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发明名称	Light-emitting gallium nitride-based compound semiconductor device
摘要
申请公布号	EP0599224(B2)	申请公布日期	2008.04.09
申请号	EP19930118670	申请日期	1993.11.19
申请人	NICHIA CORPORATION	发明人	NAKAMURA, SHUJI;MUKAI, TAKASHI;IWASA, NARUHITO
分类号	H01L21/20;H01L33/00;H01L33/02;H01L33/32;H01S5/323	主分类号	H01L21/20
代理机构		代理人
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