发明名称
摘要 PURPOSE: A plasma processing apparatus is provided to be capable of preventing foreign substance from being attached at a dielectric part between a high frequency antenna and a plasma generating part. CONSTITUTION: A plasma processing apparatus(100) is provided with a high frequency antenna(112), a high frequency supply voltage source(160) connected to the high frequency antenna, and a susceptor(106) for loading a process object body. The plasma processing apparatus further includes a dielectric part(120) between the high frequency antenna and the susceptor, a conductive part(170) between the high frequency antenna and the dielectric part, a ground circuit(180) connected to the conductive part, and an inductor(302) installed at the ground circuit.
申请公布号 JP4074168(B2) 申请公布日期 2008.04.09
申请号 JP20020278682 申请日期 2002.09.25
申请人 发明人
分类号 H01L21/3065;H05H1/46;B01J19/08;H05H1/26 主分类号 H01L21/3065
代理机构 代理人
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