| 摘要 |
A method for producing an alignment mark is performed such that the alignment mark can be removed from the surface of a substrate without leaving any trace thereof after the alignment mark has been used for alignment. After a first photoresist layer has been formed on a substrate, the first photoresist layer is subjected to patterning, and the alignment mark is thereby formed from the first photoresist layer. In the next step, after a second photoresist layer has been formed so as to cover the alignment mark, the second photoresist layer is subjected to patterning on the basis of the alignment mark. After the surface of the substrate has been subjected to etching by use of a resist mask thus formed, the resist mask and the alignment mark are removed, and the region where the alignment mark has been located is made flat.
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